Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US11583687Application Date: 2006-10-19
-
Publication No.: US07777332B2Publication Date: 2010-08-17
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-322503 20051107
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device including: a semiconductor chip having a rectangular surface on which a plurality of electrodes are formed; a plurality of resin protrusions formed on the surface of the semiconductor chip; and a plurality of interconnects each of which is electrically connected to one of the electrodes and includes an electrical connection section disposed on one of the resin protrusions. At least part of the resin protrusions are disposed in a region near a short side of the surface and extend in a direction which intersects the short side.
Public/Granted literature
- US20070108607A1 Semiconductor device Public/Granted day:2007-05-17
Information query
IPC分类: