Invention Grant
US07781329B2 Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices
有权
在包括半导体器件中的金属覆盖层的金属区域的介电材料中减少泄漏
- Patent Title: Reducing leakage in dielectric materials including metal regions including a metal cap layer in semiconductor devices
- Patent Title (中): 在包括半导体器件中的金属覆盖层的金属区域的介电材料中减少泄漏
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Application No.: US12425498Application Date: 2009-04-17
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Publication No.: US07781329B2Publication Date: 2010-08-24
- Inventor: Axel Preusse , Markus Nopper , Thomas Ortleb , Juergen Boemmels
- Applicant: Axel Preusse , Markus Nopper , Thomas Ortleb , Juergen Boemmels
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102008030849 20080630
- Main IPC: H01L21/4763
- IPC: H01L21/4763

Abstract:
By introducing an additional heat treatment prior to and/or after contacting a sensitive dielectric material with wet chemical agents, such as an electrolyte solution, enhanced performance with respect to leakage currents or dielectric strength may be accomplished during the fabrication of advanced semiconductor devices. For example, metal cap layers for metal lines may be provided on the basis of electroless deposition techniques, wherein the additional heat treatment(s) may provide the required electrical performance.
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