Invention Grant
- Patent Title: Method for photomask plasma etching using a protected mask
- Patent Title (中): 使用保护掩模的光掩模等离子体蚀刻的方法
-
Application No.: US11044339Application Date: 2005-01-27
-
Publication No.: US07790334B2Publication Date: 2010-09-07
- Inventor: Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
- Applicant: Madhavi Chandrachood , Ajay Kumar , Wai-Fan Yau
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A method for etching chromium and forming a photomask is provided. In one embodiment, a method for etching chromium includes providing a film stack in a processing chamber having a chromium layer, patterning a photoresist layer on the film stack, depositing a conformal protective layer on the patterned photoresist layer, etching the conformal protective layer to expose a chromium layer through the patterned photoresist layer, and etching the chromium layer. The methods for etching chromium of the present invention are particularly suitable for fabricating photomasks.
Public/Granted literature
- US20060166106A1 Method for photomask plasma etching using a protected mask Public/Granted day:2006-07-27
Information query
