Electrical device and method for fabricating the same

Invention Grant

US07795090B2 Electrical device and method for fabricating the same 有权

Title translation: 电气装置及其制造方法

Please log in to see more content

Patent Title: Electrical device and method for fabricating the same
Patent Title (中): 电气装置及其制造方法
Application No.: US12211815

Application Date: 2008-09-17
Publication No.: US07795090B2

Publication Date: 2010-09-14
Inventor: Shian-Jyh Lin , Chien-Li Cheng , Pei-Ing Lee , Chung-Yuan Lee
Applicant: Shian-Jyh Lin , Chien-Li Cheng , Pei-Ing Lee , Chung-Yuan Lee
Applicant Address: TW Kueishan, Tao-Yuan Hsien
Assignee: Nanya Technology Corp.
Current Assignee: Nanya Technology Corp.
Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
Agent Winston Hsu
Priority: TW95101275A 20060112
Main IPC: H01L21/8242
IPC: H01L21/8242

Electrical device and method for fabricating the same

Abstract:

A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.

Abstract(Chinese):

公开了一种使用不对称聚合间隔物制造自对准凹槽的方法。提供了其上具有第一焊盘层和第二焊盘层的半导体衬底。多个沟槽嵌入在半导体衬底的存储器阵列区域中。每个沟槽包括从半导体衬底的主表面挤出的沟槽顶层。非对称聚合物间隔物形成在挤出沟槽顶层的一侧上，并且在氧化之后用作用于在靠近沟槽形成凹部的掩模。

Public/Granted literature

US20090011569A1 ELECTRICAL DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-01-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）