Invention Grant
- Patent Title: Method of checking and correcting mask pattern
- Patent Title (中): 掩模图案的检查和校正方法
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Application No.: US12019640Application Date: 2008-01-25
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Publication No.: US07797656B2Publication Date: 2010-09-14
- Inventor: Yu-Shiang Yang , Hui-Fang Kuo
- Applicant: Yu-Shiang Yang , Hui-Fang Kuo
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu
- Main IPC: G06F9/45
- IPC: G06F9/45 ; G06F17/50

Abstract:
The present invention provides a method of checking and correcting a mask pattern. The method includes inputting a mask pattern, wherein the mask pattern includes at least a segment; inputting a process rule; selecting an edge, which fits in with an orientation model, as a target edge, wherein two ends of the target edge are an ahead direction and a behind direction, and the ahead direction and the behind direction each further comprise at least a checking point; identifying an interacting edge from the mask pattern along the checking directions; performing a process rule check to provide a correcting value; performing a first correction to provide a first bias to the target edge; and performing a second correction to provide a second bias to the interacting edge, wherein a sum of the first bias and the second bias equals the correcting value.
Public/Granted literature
- US20090193385A1 Method of checking and correcting mask pattern Public/Granted day:2009-07-30
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