Invention Grant
- Patent Title: Microelectronic multiple electron beam emitting device
- Patent Title (中): 微电子多电子束发射装置
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Application No.: US11814228Application Date: 2006-01-24
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Publication No.: US07800085B2Publication Date: 2010-09-21
- Inventor: Pierre Nicolas , Yohan Desieres
- Applicant: Pierre Nicolas , Yohan Desieres
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0550235 20050127
- International Application: PCT/FR2006/050047 WO 20060124
- International Announcement: WO2006/079741 WO 20060803
- Main IPC: G01J1/58
- IPC: G01J1/58
Abstract:
An electronic emission device emitting plural beams of electrons and including a first structure of a plurality of electron beam emission micro-sources, and a second structure opposite the first structure for collecting electrons emitted by the first structure and for carrying out a secondary emission following the collection. The device can be applied in particular to the field of direct writing lithography.
Public/Granted literature
- US20080169429A1 Microelectronic Multiple Electron Beam Emitting Device Public/Granted day:2008-07-17
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