Methods for fabricating SOI devices

Invention Grant

US07803674B2 Methods for fabricating SOI devices 有权

Title translation: 制造SOI器件的方法

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Patent Title: Methods for fabricating SOI devices
Patent Title (中): 制造SOI器件的方法
Application No.: US12468131

Application Date: 2009-05-19
Publication No.: US07803674B2

Publication Date: 2010-09-28
Inventor: Chung-Long Cheng , Kong-Beng Thei , Sheng-Chen Chung , Tzung-Chi Lee , Harry Chuang
Applicant: Chung-Long Cheng , Kong-Beng Thei , Sheng-Chen Chung , Tzung-Chi Lee , Harry Chuang
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Birch, Stewart, Kolasch & Birch, LLP
Main IPC: H01L21/84
IPC: H01L21/84

Abstract:

Silicon on insulator (SOI) devices and methods for fabricating the same are provided. An exemplary embodiment of a SOI device comprises a substrate. A first insulating layer is formed over the substrate. A plurality of semiconductor islands is formed over the first insulating layer, wherein the semiconductor islands are isolated from each other. A second insulating layer is formed over the first insulating layer, protruding over the semiconductor islands and surrounding thereof. At least one recess is formed in a portion of the second insulating layer adjacent to a pair of the semiconductor islands. A first dielectric layer is formed on a portion of each of the semiconductor islands. A conductive layer is formed over the first dielectric layer and over the second insulating layer exposed by the recess. A pair of source/drain regions is oppositely formed in portions of each of the semiconductor islands not covered by the first dielectric layer and the conductive layer.

Abstract(Chinese):

提供绝缘体上硅（SOI）器件及其制造方法。 SOI器件的示例性实施例包括衬底。在衬底上形成第一绝缘层。在第一绝缘层上形成多个半导体岛，其中半导体岛彼此隔离。在第一绝缘层上形成第二绝缘层，突出在半岛上并围绕它们。在与一对半导体岛相邻的第二绝缘层的一部分中形成至少一个凹部。第一电介质层形成在每个半导体岛的一部分上。导电层形成在第一电介质层之上，并在由凹部露出的第二绝缘层之上。一对源极/漏极区域相对地形成在未被第一介电层和导电层覆盖的半导体岛的每一个的部分中。

Public/Granted literature

US20090298243A1 SOI DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2009-12-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体