Invention Grant
- Patent Title: Method for fabricating a semiconductor device
- Patent Title (中): 半导体器件的制造方法
-
Application No.: US11964516Application Date: 2007-12-26
-
Publication No.: US07803701B2Publication Date: 2010-09-28
- Inventor: Shian-Jyh Lin , Shun-Fu Chen , Tse-Chuan Kuo , An-Hsiung Liu
- Applicant: Shian-Jyh Lin , Shun-Fu Chen , Tse-Chuan Kuo , An-Hsiung Liu
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Priority: TW96134019A 20070912
- Main IPC: H01L21/8242
- IPC: H01L21/8242 ; H01L21/425
Abstract:
A method for fabricating the semiconductor device comprises providing a semiconductor substrate having a device region and a testkey region. A first trench is formed in the device region and a second trench is formed in the testkey region. A conductive layer with a first etching selectivity is formed in the first and second trenches. A first implantation process is performed in a first direction to form a first doped region with a first impurity and an undoped region in the conductive layer simultaneously and respectively in the device region and in the testkey region. A second implantation process is performed in the second trench to form a second doped region with a second impurity in the conductive layer, wherein the conductive layer in the second trench has a second etching selectivity higher than the first etching selectivity.
Public/Granted literature
- US20090068813A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE Public/Granted day:2009-03-12
Information query
IPC分类:
