Invention Grant
US07807978B2 Divergent charged particle implantation for improved transistor symmetry
有权
用于改善晶体管对称性的发散带电粒子注入
- Patent Title: Divergent charged particle implantation for improved transistor symmetry
- Patent Title (中): 用于改善晶体管对称性的发散带电粒子注入
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Application No.: US12114866Application Date: 2008-05-05
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Publication No.: US07807978B2Publication Date: 2010-10-05
- Inventor: James D. Bernstein , Lance S. Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
- Applicant: James D. Bernstein , Lance S. Robertson , Said Ghneim , Jiejie Xu , Jeffrey Loewecke
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G01N23/00
- IPC: G01N23/00 ; G21K7/00
Abstract:
The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).
Public/Granted literature
- US20080206971A1 DIVERGENT CHARGED PARTICLE IMPLANTATION FOR IMPROVED TRANSISTOR SYMMETRY Public/Granted day:2008-08-28
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