公开(公告)号：US07253072B2

公开(公告)日：2007-08-07

申请号：US11006257

申请日：2004-12-07

Applicant: James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Nandu Mahalingam ,  Benjamin Moser

Inventor： James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Nandu Mahalingam ,  Benjamin Moser

IPC: H01L21/331

CPC classification number: H01L21/26586 ,  H01L21/823814 ,  H01L29/66659

Abstract: The present invention provides a method for implanting ions in a substrate and a method for manufacturing an integrated circuit. The method for implanting ions in a substrate, among other steps, including placing a substrate (410) on an implant platen (405) such that a predominant axes (430) of the substrate (410) is rotated about 30 degrees to about 60 degrees or about 120 degrees to about 150 degrees offset from a radial with respect to the implant platen (405), and further wherein the substrate (410) is not tilted. The method further includes implanting ions into the substrate (410), the rotated position of the predominant axes (430) reducing shadowing.

Abstract translation: 本发明提供了一种在衬底中注入离子的方法和用于制造集成电路的方法。 包括将衬底（410）放置在植入台板（405）上以使得衬底（410）的主轴（430）旋转约30度至约60度的方法 或相对于植入台板（405）偏离径向的约120度至约150度，并且其中所述基底（410）不倾斜。 该方法还包括将离子注入到基底（410）中，主轴（430）的旋转位置减少阴影。

公开(公告)号：US06221169B1

公开(公告)日：2001-04-24

申请号：US09309096

申请日：1999-05-10

Applicant: James D. Bernstein ,  Peter M. Kopalidis ,  Brian S. Freer

Inventor： James D. Bernstein ,  Peter M. Kopalidis ,  Brian S. Freer

IPC: B08B700

CPC classification number: H01J37/317 ,  H01J2237/0041 ,  H01J2237/31701

Abstract: A method and system is provided for cleaning a contaminated surface of a vacuum chamber, comprising means for (i) generating an ion beam (44) having a reactive species (e.g., fluorine) component; (ii) directing the ion beam toward a contaminated surface (100); (iii) neutralizing the ion beam (44) by introducing, into the chamber proximate the contaminated surface, a neutralizing gas (70) (e.g., xenon) such that the ion beam (44) collides with molecules of the neutralizing gas, and, as a result of charge exchange reactions between the ion beam and the neutralizing gas molecules, creates a beam of energetic reactive neutral atoms of the reactive species; (iv) cleaning the surface (100) by allowing the beam of energetic reactive neutral atoms of the reactive species to react with contaminants to create reaction products; and (v) removing from the chamber any volatile reaction products that result. Alternatively, the method and system include means for (i) generating an energetic non-reactive (e.g., xenon) ion beam (44); (ii) directing the non-reactive ion beam toward a contaminated surface (100); (iii) introducing a cleaning gas (70) proximate the contaminated surface, comprised at least partially of a reactive species (e.g., fluorine) component; (iv) dissociating the cleaning gas using the ion beam (44) to create a supply of energetic reactive neutral atoms of the reactive species; (v) cleaning the surface (100) by allowing the energetic reactive neutral atoms of the reactive species to react with contaminants to create reaction products; and (vi) removing from the chamber any volatile reaction products that result.

Abstract translation: 提供了一种用于清洁真空室的污染表面的方法和系统，包括用于（i）产生具有反应性物质（例如氟）组分的离子束（44）的装置; （ii）将离子束导向污染表面（100）; （iii）通过将靠近污染表面的中和气体（例如氙）引入到室内，使得离子束（44）与中和气体的分子碰撞来中和离子束（44） 作为离子束和中和气体分子之间的电荷交换反应的结果，产生反应性物质的能量反应中性原子束; （iv）通过允许反应性物质的能量反应性中性原子束与污染物反应以产生反应产物来清洁表面（100）; 和（v）从室中除去导致的任何挥发性反应产物。 或者，该方法和系统包括用于（i）产生能量非反应（例如氙）离子束（44）的装置; （ii）将非反应性离子束引向污染表面（100）; （iii）在污染表面附近引入清洁气体（70），其至少部分地由反应性物质（例如氟）组分组成; （iv）使用离子束（44）解离清洁气体以产生反应性物质的能量反应性中性原子; （v）通过使反应性物质的能量反应性中性原子与污染物反应以产生反应产物来清洁表面（100）; 和（vi）从室中除去导致的任何挥发性反应产物。

公开(公告)号：US07232744B2

公开(公告)日：2007-06-19

申请号：US10956583

申请日：2004-10-01

Applicant: Said Ghneim ,  James D. Bernstein ,  Lance S. Robertson ,  Jiejie Xu ,  Jeffrey Loewecke

Inventor： Said Ghneim ,  James D. Bernstein ,  Lance S. Robertson ,  Jiejie Xu ,  Jeffrey Loewecke

IPC: H01L21/265

CPC classification number: H01L21/26586 ,  H01J2237/31701 ,  H01L21/823814 ,  Y10S438/914

Abstract: The present invention provides a method for implanting a dopant in a substrate and a method for manufacturing a semiconductor device. The method for implanting a dopant, among other steps, including tilting a substrate (310) located on or over an implant platen (305) about an axis in a first direction with respect to an implant source (320) and implanting a portion of an implant dose within the substrate (310) tilted in the first direction. The method further includes tilting the substrate (310) having already been tilted in the first direction about the axis in a second opposite direction, and implanting at least a portion of the implant dose within the substrate (310) tilted in the second opposite direction.

Abstract translation: 本发明提供了一种用于在衬底中注入掺杂剂的方法和用于制造半导体器件的方法。 用于植入掺杂剂的方法以及其它步骤包括使位于植入物台板（305）上方或上方的衬底（310）相对于植入源（320）沿着第一方向的轴线倾斜并植入一部分 在第一方向上倾斜的衬底（310）内的植入剂量。 该方法还包括使已经在第一方向上沿第一方向倾斜的衬底（310）沿着第二相反方向围绕该轴线倾斜，并且将植入剂量的至少一部分植入衬底（310）内沿第二相反方向倾斜。

公开(公告)号：US07208330B2

公开(公告)日：2007-04-24

申请号：US11033939

申请日：2005-01-12

Applicant: Sean M. Collins ,  Jeffrey G. Loewecke ,  James D. Bernstein

Inventor： Sean M. Collins ,  Jeffrey G. Loewecke ,  James D. Bernstein

IPC: G01R31/26

CPC classification number: H01L21/26513 ,  H01L21/28035

Abstract: The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant within the substrate (340) using an implant (370), the implant (370) moving at varying speeds across the substrate (340) to provide different concentrations of the dopant within the substrate (340).

Abstract translation: 本发明提供了一种在衬底中放置掺杂剂的方法和用于制造集成电路的方法。 用于将掺杂剂放置在衬底中的方法以及其它步骤包括使用植入物（370）提供衬底（340）并且在衬底（340）内注入掺杂剂，所述植入物（370）以变化的速度跨过衬底移动 （340）以在衬底（340）内提供不同浓度的掺杂剂。

公开(公告)号：US5903009A

公开(公告)日：1999-05-11

申请号：US929180

申请日：1997-09-08

Applicant: James D. Bernstein ,  Brian S. Freer ,  Peter L. Kellerman

Inventor： James D. Bernstein ,  Brian S. Freer ,  Peter L. Kellerman

IPC: C23C14/48 ,  H01J37/02 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/026 ,  H01J2237/0041

Abstract: A plasma-enhanced electron shower (62) for an ion implantation system (10) is provided, including an extension tube (66) having a replaceable graphite inner liner (88). The inner liner is biased to a low negative potential (-6 V) to prevent low energy secondary electrons generated by the electron shower target from being shunted away from the wafer, keeping them available for wafer charge neutralization. The electrically biased inner surface is provided with serrations (126) comprising alternating wafer-facing surfaces (128) and target-facing surfaces (130). During operation of the electron shower (62), photoresist or other material which may sputter back from the wafer collects on the wafer-facing surfaces (128), rendering them non-conductive, while the target-facing surfaces (130) remain clean and therefore conductive. The conductive target-facing surfaces provide a shunt (low resistance) path to electrical ground for high energy electrons generated in the electron shower.

Abstract translation: 提供了一种用于离子注入系统（10）的等离子体增强型电子淋浴（62），其包括具有可更换石墨内衬（88）的延伸管（66）。 内衬被偏压到低负电位（-6V），以防止由电子淋浴靶产生的低能量二次电子被分流离开晶片，保持它们可用于晶片电荷中和。 电偏置的内表面设置有锯齿（126），其包括交替的面向晶片的表面（128）和面向对象的表面（130）。 在电子喷淋（62）的操作期间，可以从晶片反射的光致抗蚀剂或其它材料收集在面向晶片的表面（128）上，使得它们不导电，同时面向目标的表面（130）保持清洁， 因此导电。 面向导电目标的表面为电子地面提供了分流（低电阻）路径，用于在电子淋浴中产生的高能电子。

公开(公告)号：US07385202B2

公开(公告)日：2008-06-10

申请号：US11006185

申请日：2004-12-07

Applicant: James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Jiejie Xu ,  Jeffrey Loewecke

Inventor： James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Jiejie Xu ,  Jeffrey Loewecke

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01L29/78 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L29/66575

Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence, and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).

Abstract translation: 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定光束发散的带电粒子束（320），并形成发散光束 的带电粒子（360）通过使带电粒子束（320）经受能量场（350），从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。

公开(公告)号：US06458430B1

公开(公告)日：2002-10-01

申请号：US09469661

申请日：1999-12-22

Applicant: James D. Bernstein ,  Peter L. Kellerman ,  Alec S. Denholm

Inventor： James D. Bernstein ,  Peter L. Kellerman ,  Alec S. Denholm

IPC: C23C1448

CPC classification number: H01J37/32412 ,  C23C14/042 ,  C23C14/48 ,  H01J37/32174 ,  H01J37/32311 ,  H01J37/32422 ,  H01J37/32871 ,  H01L21/2236 ,  H01L21/266

Abstract: A method for use with a plasma immersion ion implantations systems wherein a substrate W having a patterned photoresist P thereon is implanted. The method includes ionizing a first gas in a chamber 12 to produce electrically inactive ions and reacting the electrically active ions with the photoresist P to produce outgassing 64. The outgassed material 64 is continuously evacuated until outgassing is substantially completed. The method further includes ionizing a second gas to produce electrically active ions and implanting a positively charged species of the electrically active ions into the substrate. Also disclosed is a method for curing the photoresist prior to ion implantation. A gas is ionized in the chamber 12 to produce positively and electrons. The electrons are first attracted to a substrate in the chamber having patterned photoresist P thereon for hardening the photoresist. The positively charged ions are then implanted into substrate W wherein photoresist outgassing is substantially prevented.

Abstract translation: 一种用于等离子体浸没离子注入系统的方法，其中植入其上具有图案化光致抗蚀剂P的基底W。 该方法包括电离室12中的第一气体以产生电惰性离子并使电活性离子与光致抗蚀剂P反应以产生除气64.将脱气的材料64连续排空，直至基本完成除气。 该方法还包括电离第二气体以产生电活性离子并将带电荷的电活性离子种类植入衬底中。 还公开了一种在离子注入之前固化光致抗蚀剂的方法。 气体在室12中被电离以产生正电子。 电子首先被吸引到其上具有图案化光致抗蚀剂P的腔室中的衬底上，以硬化光致抗蚀剂。 然后将带正电荷的离子注入衬底W中，其中基本上防止了光致抗蚀剂的除气。

公开(公告)号：US5909031A

公开(公告)日：1999-06-01

申请号：US924969

申请日：1997-09-08

Applicant: Peter L. Kellerman ,  James D. Bernstein ,  Brian S. Freer

Inventor： Peter L. Kellerman ,  James D. Bernstein ,  Brian S. Freer

IPC: G21K5/04 ,  H01J37/02 ,  H01J37/20 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/026 ,  H01J2237/31701

Abstract: A plasma-enhanced electron shower (62) for an ion implantation system (10) is provided, including a target (64) provided with a chamber (84) at least partially defined by a replaceable graphite liner (82). A filament assembly (67) attached to the target generates and directs a supply of primary electrons toward a surface (118) provided by the graphite liner, which is biased to a low negative voltage of up to -10V (approximately -6V) to insure that secondary electrons emitted therefrom as a result of impacting primary electrons have a uniform low energy. The filament assembly (67) includes a filament (68) for thermionically emitting primary electrons; a biased (-300V) filament electrode (70) for focusing the emitted primary electrons, and a grounded extraction aperture (72) for extracting the focused primary electrons toward the graphite surface (118). A gas nozzle (77) attached to the target (64) introduces into the chamber a supply of gas molecules to be ionized by the primary electrons. The direction of the nozzle is set with respect to the filament assembly (67) to maximize the ionization rate of the gas molecules.

Abstract translation: 提供了一种用于离子注入系统（10）的等离子体增强型电子淋浴（62），其包括设置有至少部分由可更换石墨衬垫（82）限定的室（84）的靶（64）。 连接到目标的灯丝组件（67）产生并引导朝向由石墨衬垫提供的表面（118）的一次电子供应，所述表面被偏压到高达-10V（约-6V）的低负电压以确保 由于冲击一次电子而发射的二次电子具有均匀的低能量。 灯丝组件（67）包括用于热离子发射一次电子的灯丝（68） 用于聚焦发射的一次电子的偏置（-300V）灯丝电极（70）和用于将聚焦的一次电子朝向石墨表面（118）提取的接地的提取孔（72）。 附着在靶（64）上的气体喷嘴（77）将通过一次电子离子化的气体分子的供给引入室内。 相对于灯丝组件（67）设置喷嘴的方向以最大化气体分子的电离速率。

公开(公告)号：US07807978B2

公开(公告)日：2010-10-05

申请号：US12114866

申请日：2008-05-05

Applicant: James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Jiejie Xu ,  Jeffrey Loewecke

Inventor： James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Jiejie Xu ,  Jeffrey Loewecke

IPC: G01N23/00 ,  G21K7/00

CPC classification number: H01L29/78 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L29/66575

Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).

Abstract translation: 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定束束散度的带电粒子束（320）; 以及通过使带电粒子束（320）经受能量场（350）而形成带电粒子（360）的发散束，从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。

公开(公告)号：US20080206971A1

公开(公告)日：2008-08-28

申请号：US12114866

申请日：2008-05-05

Applicant: James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Jiejie Xu ,  Jeffrey Loewecke

Inventor： James D. Bernstein ,  Lance S. Robertson ,  Said Ghneim ,  Jiejie Xu ,  Jeffrey Loewecke

IPC: H01L21/265

CPC classification number: H01L29/78 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L29/66575

Abstract: The present invention provides a method for implanting charged particles in a substrate and a method for manufacturing an integrated circuit. The method for implanting charged particles in a substrate, among other steps, includes projecting a beam of charged particles (320) to a substrate (330), the beam of charged particles (320) having a given beam divergence; and forming a diverged beam of charged particles (360) by subjecting the beam of charged particles (320) to an energy field (350), thereby causing the beam of charged particles (320) to have a larger beam divergence. The method then desires implanting the diverged beam of charged particles (360) into the substrate (330).

Abstract translation: 本发明提供了一种用于将带电粒子注入基板的方法和用于制造集成电路的方法。 用于将带电粒子注入衬底的方法以及其他步骤包括将带电粒子束（320）投射到衬底（330），具有给定束束散度的带电粒子束（320）; 以及通过使带电粒子束（320）经受能量场（350）而形成带电粒子（360）的发散束，从而使带电粒子束（320）具有较大的光束发散。 该方法然后期望将发散的带电粒子束（360）植入衬底（330）中。