Manufacturing method of dual damascene structure

Invention Grant

US07811930B2 Manufacturing method of dual damascene structure 有权

Title translation: 双镶嵌结构的制造方法

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Patent Title: Manufacturing method of dual damascene structure
Patent Title (中): 双镶嵌结构的制造方法
Application No.: US12406938

Application Date: 2009-03-18
Publication No.: US07811930B2

Publication Date: 2010-10-12
Inventor: Chih-Jung Wang
Applicant: Chih-Jung Wang
Applicant Address: TW Hsinchu
Assignee: United Microelectronics Corp.
Current Assignee: United Microelectronics Corp.
Current Assignee Address: TW Hsinchu
Agency: Jianq Chyun IP Office
Main IPC: H01L21/4763
IPC: H01L21/4763

Manufacturing method of dual damascene structure

Abstract:

A manufacturing method of a dual damascene structure is provided. First, a first dielectric layer, a second dielectric layer, and a mask layer are formed. A first trench structure is formed in the mask layer. A via structure is formed in the mask layer, the second dielectric layer, and the first dielectric layer. A portion of the second dielectric layer is then removed, so as to transform the first trench structure into a second trench structure. Here, a bottom of the second trench structure exposes the first dielectric layer.

Abstract(Chinese):

提供了一种双镶嵌结构的制造方法。首先，形成第一电介质层，第二电介质层和掩模层。在掩模层中形成第一沟槽结构。在掩模层，第二介电层和第一介电层中形成通孔结构。然后去除第二电介质层的一部分，以便将第一沟槽结构转变成第二沟槽结构。这里，第二沟槽结构的底部露出第一电介质层。

Public/Granted literature

US20090176378A1 MANUFACTURING METHOD OF DUAL DAMASCENE STRUCTURE Public/Granted day:2009-07-09

Information query

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）