Invention Grant
US07821803B2 Memory module having star-type topology and method of fabricating the same
有权
具有星型拓扑的存储器模块及其制造方法
- Patent Title: Memory module having star-type topology and method of fabricating the same
- Patent Title (中): 具有星型拓扑的存储器模块及其制造方法
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Application No.: US12221728Application Date: 2008-08-06
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Publication No.: US07821803B2Publication Date: 2010-10-26
- Inventor: Do-Hyung Kim , Byoung-Ha Oh , Young-Jun Park , Yong-Ho Ko
- Applicant: Do-Hyung Kim , Byoung-Ha Oh , Young-Jun Park , Yong-Ho Ko
- Applicant Address: KR
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2007-0078571 20070806
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A memory module having a start-type topology and a method of fabricating the same are provided. The memory module includes a substrate. Memory devices are mounted on the substrate in at least two rows and at least two columns. A star-type topology is disposed to be electrically connected to the memory devices. One or more pairs of adjacent ones of the memory devices have a point-symmetric structure.
Public/Granted literature
- US20090097297A1 Memory module having star-type topology and method of fabricating the same Public/Granted day:2009-04-16
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