Invention Grant
- Patent Title: Method of processing a contact pad, method of manufacturing a contact pad, and integrated circuit element
- Patent Title (中): 接触垫的处理方法，接触垫的制造方法以及集成电路元件
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Application No.: US11936541Application Date: 2007-11-07
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Publication No.: US07829450B2Publication Date: 2010-11-09
- Inventor: Markus Hammer , Guenther Ruhl , Andreas Strasser , Michael Melzl , Reinhard Goellner , Doerthe Groteloh
- Applicant: Markus Hammer , Guenther Ruhl , Andreas Strasser , Michael Melzl , Reinhard Goellner , Doerthe Groteloh
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
In a method of processing a contact pad, a passivation layer stack including at least one passivation layer is formed on at least an upper surface of a contact pad region. A first portion of the passivation layer stack is removed from above the contact pad region, wherein a second portion of the passivation layer remains on the contact pad region and covers the contact pad region. An adhesion layer is formed on the passivation layer stack. The adhesion layer is patterned, wherein the adhesion layer is removed from above the contact pad region. Furthermore, the second portion of the passivation layer stack is removed.
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Information query
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