Invention Grant
- Patent Title: Semiconductor structure and method of fabricating the same
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US12325869Application Date: 2008-12-01
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Publication No.: US07834394B2Publication Date: 2010-11-16
- Inventor: Hung-Sung Lin
- Applicant: Hung-Sung Lin
- Applicant Address: TW Science-Based Industrial Park, Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsinchu
- Agent Winston Hsu; Scott Margo; Min-Lee Teng
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor structure including a substrate, a gate dielectric layer, a gate, a source region and a drain region is provided. The gate dielectric layer is disposed on the substrate. At least one recess is disposed in the substrate. The gate is disposed on the gate dielectric layer and in the recess. The source and drain regions are respectively disposed in the substrate beside the gate.
Public/Granted literature
- US20100133594A1 SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-06-03
Information query
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