Invention Grant
US07846345B2 Method of manufacturing an imprinting template using a semiconductor manufacturing process and the imprinting template obtained 有权
使用半导体制造工艺制造压印模板的方法和获得的压印模板

Method of manufacturing an imprinting template using a semiconductor manufacturing process and the imprinting template obtained
Abstract:
The method of manufacturing an imprinting template according to the present invention utilizes a semiconductor manufacturing process and comprises a step of etching an oxide layer having a thickness of from 1000 to 8000 angstroms on a substrate by a microlithography and etching process, to form a pattern having a plurality of pillar-shaped holes, thereby forming an imprinting plate having a plurality of pillar-shaped holes. A material layer may be filled into the holes and a part of the oxide layer is removed to form an imprinting template having a plurality of pillar-shaped protrusions. Alternatively, a silicon substrate may be used instead of the substrate and the oxide layer. The imprinting template according to the present invention has advantages of mass production, fast production, and low cost, and is suitable to serve as the imprinting plate for making photonic crystals.
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