Invention Grant
- Patent Title: Ion implantation apparatus and ion implantation method
- Patent Title (中): 离子注入装置和离子注入方法
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Application No.: US12100666Application Date: 2008-04-10
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Publication No.: US07851772B2Publication Date: 2010-12-14
- Inventor: Mitsukuni Tsukihara , Takanori Yagita , Hiroshi Sogabe , Toshio Yumiyama , Mitsuaki Kabasawa
- Applicant: Mitsukuni Tsukihara , Takanori Yagita , Hiroshi Sogabe , Toshio Yumiyama , Mitsuaki Kabasawa
- Applicant Address: JP Tokyo
- Assignee: Sen Corporation an Shi and Axcelis Company
- Current Assignee: Sen Corporation an Shi and Axcelis Company
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2007-103194 20070410
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/28 ; G21K1/08

Abstract:
An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.
Public/Granted literature
- US20080251713A1 ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD Public/Granted day:2008-10-16
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