Invention Grant
- Patent Title: Semiconductor device
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Application No.: US12719234Application Date: 2010-03-08
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Publication No.: US07851912B2Publication Date: 2010-12-14
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-229355 20050808
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor device including: a semiconductor chip; a plurality of electrodes formed on the semiconductor chip and arranged along one side of the semiconductor chip; a resin protrusion formed on the semiconductor chip and extending in a direction which intersects the side; and a plurality of electrical connection sections formed on the resin protrusion and electrically connected to the respective electrodes.
Public/Granted literature
- US20100155945A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-24
Information query
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