Invention Grant
- Patent Title: Method of producing a strained layer
- Patent Title (中): 生产应变层的方法
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Application No.: US12410161Application Date: 2009-03-24
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Publication No.: US07863156B2Publication Date: 2011-01-04
- Inventor: Chrystel Deguet , Frank Fournel
- Applicant: Chrystel Deguet , Frank Fournel
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Brinks Hofer Gilson & Lione
- Priority: FR0852034 20080328
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.
Public/Granted literature
- US20090246933A1 METHOD OF PRODUCING A STRAINED LAYER Public/Granted day:2009-10-01
Information query
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