公开(公告)号：US09991439B2

公开(公告)日：2018-06-05

申请号：US13808703

申请日：2011-07-05

Applicant: Chrystel Deguet ,  Nicolas Blanc ,  Bruno Imbert ,  Jean-Sebastien Moulet

Inventor： Chrystel Deguet ,  Nicolas Blanc ,  Bruno Imbert ,  Jean-Sebastien Moulet

IPC: H01L41/22 ,  H01L41/313 ,  H03H9/13 ,  H03H3/02

CPC classification number: H01L41/22 ,  H01L41/313 ,  H03H3/02 ,  H03H9/131 ,  Y10T29/42

Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

公开(公告)号：US20120145667A1

公开(公告)日：2012-06-14

申请号：US13314844

申请日：2011-12-08

Applicant: Bruno IMBERT ,  Emmanuel DEFAY ,  Chrystel DEGUET ,  Hubert MORICEAU ,  Mathieu PIJOLAT

Inventor： Bruno IMBERT ,  Emmanuel DEFAY ,  Chrystel DEGUET ,  Hubert MORICEAU ,  Mathieu PIJOLAT

IPC: B32B37/30 ,  C23F1/02 ,  B32B38/00 ,  B32B37/14

CPC classification number: H03H3/08 ,  B32B37/30 ,  H03H3/00 ,  H03H3/02 ,  H03H9/173 ,  H03H2003/021

Abstract: A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.

Abstract translation: 一种用于制造包括压电材料层的悬浮膜的声波谐振器的方法，包括以下步骤：在第一衬底的表面上制备包括至少一层第一压电材料的第一堆叠; 制备包括至少一个第二基底的第二叠层; 通过沉积或产生具有受控尺寸的颗粒的至少一个非结合起始区的产生，离开所述堆之一的表面在随后的结合步骤之前局部地赋予突出的纳米结构; 由于存在非结合起始区，所述两个堆叠的直接结合在堆叠之间产生泡罩; 以及使所述第一叠层变薄以至少消除所述第一衬底。

公开(公告)号：US20110129988A1

公开(公告)日：2011-06-02

申请号：US13056220

申请日：2009-07-07

Applicant: Thomas Signamarcheix ,  Chrystel Deguet ,  Frederic Mazen

Inventor： Thomas Signamarcheix ,  Chrystel Deguet ,  Frederic Mazen

IPC: H01L21/762 ,  H01L21/26

CPC classification number: H01L21/76254

Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.

Abstract translation: 将原子和/或离子注入衬底的方法，包括：a）在衬底中的第一深度处首先注入离子或原子，以形成第一注入平面，b）离子或原子的至少一次第二次注入 在与第一深度不同的衬底中的第二深度处，形成至少一个第二注入平面。

公开(公告)号：US20100221891A1

公开(公告)日：2010-09-02

申请号：US12705039

申请日：2010-02-12

Applicant: FRANCK FOURNEL ,  Thomas Signamarcheix ,  Laurent Clavelier ,  Chrystel Deguet

Inventor： FRANCK FOURNEL ,  Thomas Signamarcheix ,  Laurent Clavelier ,  Chrystel Deguet

IPC: H01L21/30

CPC classification number: H01L21/76254

Abstract: A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.

Abstract translation: 制造混合基板的方法包括制备单晶第一基板以获得两个表面部分。 制备临时衬底，其包括混合层，沿其延伸一个表面部分并且由第一区域和相邻的不同第二区域的非晶材料形成，第二区域形成第一衬底的至少部分自由表面。 第一衬底通过在至少非晶区上分子键合而与第一表面部分具有相同的晶体取向而与另一表面部分结合。 选择性地承载根据第一基板的晶体取向的至少一部分非晶区域的固相重结晶，并分离两个表面部分。

公开(公告)号：US20100184303A1

公开(公告)日：2010-07-22

申请号：US12654441

申请日：2009-12-18

Applicant: Loic Sanchez ,  Chrystel Deguet

Inventor： Loic Sanchez ,  Chrystel Deguet

IPC: H01L21/30

CPC classification number: G01N1/32 ,  H01L22/24

Abstract: The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Abstract translation: 本发明涉及一种用于检测缺陷的方法，更具体地说，涉及具有至少一个结晶锗基表面层的元件的紧急位错。 该方法包括在具有至少氧化性气体和中性气体的混合物的碱的气氛中的退火步骤，能够选择性地氧化晶体锗基表面层的出现位错。

公开(公告)号：US20080268615A1

公开(公告)日：2008-10-30

申请号：US12090318

申请日：2006-10-17

Applicant: Frederic Allibert ,  Chrystel Deguet ,  Claire Richtarch

Inventor： Frederic Allibert ,  Chrystel Deguet ,  Claire Richtarch

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours.The invention also relates to a method to produce a structure comprising a Ge layer, the method comprising bonding between a donor substrate comprising at least in the upper part thereof a thin Ge layer and a receiving substrate, characterised in that it comprises the following steps: (a) bonding of the donor with the receiving substrate such that the Ge layer is located in proximity to the bonding interface; (b) removal of the part of the donor substrate not comprising the Ge layer; (c) treatment of the structure comprising the receiving substrate and the Ge layer in accordance with said treatment method.

Abstract translation: 本发明涉及一种结构的处理方法，该方法包括在衬底上的薄Ge层，所述层已预先与衬底接合，该方法包括改善Ge层的电性能和/或Ge界面的处理 层，其特征在于所述处理是在500℃和600℃之间的温度下施加不超过3小时的热处理。 本发明还涉及一种产生包括Ge层的结构的方法，该方法包括至少在其上部包括薄Ge层和接收衬底之间的施主衬底之间的结合，其特征在于包括以下步骤： （a）将所述施主与所述接收基板接合，使得所述Ge层位于所述接合界面附近; （b）去除不包括Ge层的供体衬底的部分; （c）根据所述处理方法处理包括接收衬底和Ge层的结构。

公开(公告)号：US20080153267A1

公开(公告)日：2008-06-26

申请号：US11959924

申请日：2007-12-19

Applicant: Laurent CLAVELIER ,  Chrystel DEGUET

Inventor： Laurent CLAVELIER ,  Chrystel DEGUET

IPC: H01L21/205

CPC classification number: H01L31/184 ,  C30B19/12 ,  C30B23/025 ,  C30B25/18 ,  C30B29/08 ,  C30B29/42 ,  G02B6/12004 ,  G02B6/43 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02625 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/1203 ,  Y02E10/544

Abstract: The invention relates to a method for manufacturing an SOI substrate, associating silicon based areas and areas of GaAs based material at the thin layer of the SOI substrate, the SOI substrate comprising a silicon support supporting successively a layer of dielectric material and a thin layer of silicon. The method comprises the following steps: supply of a SOI substrate comprising a silicon support mismatched by an angle of between 2° and 10° inclusive, the thin silicon based layer being oriented parallel to the plane (001) or (010), or (100) or (110) or (101) or (011) or (111), preservation of at least one area of the thin silicon layer, elimination of at least one non-preserved area of the thin silicon layer until the layer of dielectric material is revealed, opening, in said non-preserved area, of the layer of dielectric material until the silicon support is revealed, growth, from the silicon of the support revealed by said opening and by liquid phase epitaxy or by lateral epitaxy, of mismatched germanium on the layer of dielectric material revealed, growth of GaAs based material from the mismatched germanium obtained in the preceding step.

Abstract translation: 本发明涉及一种用于制造SOI衬底的方法，该SOI衬底的薄层将基于硅的区域和GaAs基材料的区域相关联，所述SOI衬底包括依次支撑介电材料层和硅层的薄层 硅。 该方法包括以下步骤：提供包含不同于2°和10°之间角度的硅载体的SOI衬底，所述薄硅基层平行于平面（001）或（010）或（010）定向，或（ 100）或（110）或（101）或（011）或（111），保存薄硅层的至少一个区域，消除薄硅层的至少一个未保存区域直到电介质层 在所述非保存区域中，揭示介质材料层的开口，直到硅支撑体露出，从由所述开口显示的支撑体的硅和通过液相外延或横向外延生长的不匹配的 介电材料层上的锗显示出，在前面步骤中获得的来自错配锗的GaAs基材料的生长。

公开(公告)号：US09638847B2

公开(公告)日：2017-05-02

申请号：US13376033

申请日：2010-06-04

Applicant: Alain-Marcel Rey ,  Chrystel Deguet ,  Laurent Frey ,  Francois Tardif

Inventor： Alain-Marcel Rey ,  Chrystel Deguet ,  Laurent Frey ,  Francois Tardif

IPC: G02B5/00 ,  G02B5/28 ,  C03C17/34 ,  G02B5/20 ,  G03F7/00

CPC classification number: G02B5/286 ,  C03C17/34 ,  C03C2217/425 ,  C03C2217/72 ,  G02B5/201 ,  G03F7/0007 ,  Y10T156/10 ,  Y10T428/24802

Abstract: A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.

公开(公告)号：US08445122B2

公开(公告)日：2013-05-21

申请号：US12338281

申请日：2008-12-18

Applicant: Chrystel Deguet ,  Laurent Clavelier ,  Franck Fournel ,  Jean-Sebastien Moulet

Inventor： Chrystel Deguet ,  Laurent Clavelier ,  Franck Fournel ,  Jean-Sebastien Moulet

IPC: G11C11/22 ,  H01L21/02

CPC classification number: G11B9/02 ,  B82Y10/00 ,  G11B5/743 ,  G11B9/1472 ,  G11B9/149 ,  Y10T428/115

Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Abstract translation: 数据存储介质包括其表面上具有电极层的载体衬底和沿着电极层延伸的敏感材料层，所述敏感材料层通过局部电场的作用被局部地改变为两个电气状态。 参考平面全局平行于敏感材料层延伸，并且被配置为容纳用于与电极层组合施加静电场的至少一个元件，该电极层包括具有至多等于100nm的尺寸的多个导电部分 在平行于参考平面的至少一个方向上并且由至少一个电绝缘区隔开，其中至少一些导电部分电互连，导电部分在敏感材料层内限定数据写/读位置。

公开(公告)号：US08318555B2

公开(公告)日：2012-11-27

申请号：US13125953

申请日：2009-10-29

Applicant: Thomas Signamarcheix ,  Franck Fournel ,  Laurent Clavelier ,  Chrystel Deguet

Inventor： Thomas Signamarcheix ,  Franck Fournel ,  Laurent Clavelier ,  Chrystel Deguet

IPC: H01L21/84

CPC classification number: H01L21/76254

Abstract: A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.

Abstract translation: 一种混合基板的制造方法，其特征在于，制备包括混合层和下层电绝缘连续层的第一基板，由第一单晶区域和第二相邻非晶区域构成的混合层，构成第 第一基板的自由表面。 第二衬底被结合到第一衬底，第二衬底在其表面上包括具有预定晶体取向的参考层。 第一衬底通过至少非晶区域的疏水分子键合而结合到第二衬底。 根据参考层的结晶取向进行至少部分非晶区域至固相的再结晶，两个基板在键合界面处分离。