Invention Grant
- Patent Title: Structure of thin film transistor array
- Patent Title (中): 薄膜晶体管阵列的结构
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Application No.: US12333313Application Date: 2008-12-12
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Publication No.: US07863616B2Publication Date: 2011-01-04
- Inventor: Yu-Cheng Chen
- Applicant: Yu-Cheng Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW95101181A 20060112
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; H01L31/062

Abstract:
A substrate having a gate electrode layer, a gate insulating layer, and a silicon layer thereon is provided. These layers are patterned into a gate area, a gate line and a gate line wiring area. A passivation layer is formed on the entire substrate and patterned to form two contact holes in the passivation layer on the silicon layer at the gate area, and partions of the passivation layer at the gate line and at the gate line wiring areas are removed. An ion implanting layer and a metal layer are formed on the substrate and patterned to form a source region, a drain region, a data line, a data line wiring area and a second layer of the gate line wiring area. A pixel electrode is formed on the passivation layer and electrically coupled to the drain region. Therefore, the TFT array can be fabricated by only four masks.
Public/Granted literature
- US20090090912A1 STRUCTURE OF THIN FILM TRANSISTOR ARRAY Public/Granted day:2009-04-09
Information query
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