Invention Grant
US07863703B2 Systems and methods for biasing high fill-factor sensor arrays and the like
有权
用于偏置高填充因子传感器阵列等的系统和方法
- Patent Title: Systems and methods for biasing high fill-factor sensor arrays and the like
- Patent Title (中): 用于偏置高填充因子传感器阵列等的系统和方法
-
Application No.: US12379581Application Date: 2009-02-25
-
Publication No.: US07863703B2Publication Date: 2011-01-04
- Inventor: JengPing Lu , James B. Boyce
- Applicant: JengPing Lu , James B. Boyce , Kathleen Dore Boyce, legal representative
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Oliff & Berridge, PLC
- Main IPC: H01L29/868
- IPC: H01L29/868 ; H01L31/105

Abstract:
A high fill-factor photosensor array is formed comprising a P-layer, an I-layer, one or more semiconductor structures adjacent to the I-layer and each coupled to a N-layer, an electrically conductive electrode formed on top of the P-layer, and an additional semiconductor structure, adjacent to the N-layer and which is electrically connected to a voltage bias source. The bias voltage applied to the additional semiconductor structure charges the additional semiconductor structure, thereby creating a tunneling effect between the N-layer and the P-layer, wherein electrons leave the N-layer and reach the P-layer and the electrically conductive layer. The electrons then migrate and distribute uniformly throughout the electrically conductive layer, which ensures a uniform bias voltage across to the entire photosensor array. The biasing scheme in this invention allows to achieve mass production of photosensors without the use of wire bonding.
Public/Granted literature
- US20090160006A1 Systems and methods for biasing high fill-factor sensor arrays and the like Public/Granted day:2009-06-25
Information query
IPC分类: