Invention Grant
US07863805B2 Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
失效
金刚石电子发射阴极,电子发射源,电子显微镜和电子束曝光装置
- Patent Title: Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
- Patent Title (中): 金刚石电子发射阴极,电子发射源,电子显微镜和电子束曝光装置
-
Application No.: US11665472Application Date: 2006-06-19
-
Publication No.: US07863805B2Publication Date: 2011-01-04
- Inventor: Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
- Applicant: Yoshiyuki Yamamoto , Akihiko Ueda , Yoshiki Nishibayashi , Takahiro Imai
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-178163 20050617; JP2005-257452 20050906; JP2005-257791 20050906
- International Application: PCT/JP2006/312263 WO 20060619
- International Announcement: WO2006/135094 WO 20061221
- Main IPC: H01J1/02
- IPC: H01J1/02 ; H01J9/02 ; H01J1/62 ; H01J63/04

Abstract:
It is possible to provide an electron emission cathode, an electron emission source having a high-luminance and narrow energy width by using diamond and an electronic device using them. The diamond electron discharge cathode has a monocrystal diamond at least at a part of it. The diamond electron emission cathode has a columnar shape including a sharpened section and a heating section. The sharpened section has an electron emission section. The electron emission section and the heating section are formed by diamond semiconductor, which is formed by a p-type semiconductor containing 2×1015 cm−3 of p-type impurities or above. The electron emission section has the semiconductor. A metal layer is formed on the surface of the electron emission cathode. The metal layer exists at least at a part of the heating section. The distance from the electron emission section to the position nearest to the end of the metal layer is 500 μm. A pair of current introduction terminals supplies current to the heating section to heat the heating section. A part of the introduced electrons is emitted from the electron emission section.
Public/Granted literature
Information query