Invention Grant
- Patent Title: Memory sense scan circuit and test interface
- Patent Title (中): 内存检测电路和测试界面
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Application No.: US11863972Application Date: 2007-09-28
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Publication No.: US07869293B2Publication Date: 2011-01-11
- Inventor: Stephen L. Morein
- Applicant: Stephen L. Morein
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Courtney IP Law
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A scannable IO circuit featuring reduced latch count for pipelined memory architectures and test methodology. For a pipelined memory system performing at speed tests, the timing sequence for processing a test command includes a precharge-read-precharge-write sequence for each clock cycle starting with the rising clock edge. The memory circuit utilizing this test command timing sequence comprises a sense amplifier and a single latch. The sense amplifier itself is used as a latch to implement scan functionality for the memory circuit. The memory device is incorporated into an integrated test wrapper circuit that executes back-to-back commands through serial compare operations using integrated scan flip-flop circuits. The test wrapper includes a fanout block and padded address scheme for testing multiple and disparate size memory devices in parallel.
Public/Granted literature
- US20090089632A1 Memory Sense Scan Circuit And Test Interface Public/Granted day:2009-04-02
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