Invention Grant
- Patent Title: Exposure method
- Patent Title (中): 曝光方法
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Application No.: US11965614Application Date: 2007-12-27
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Publication No.: US07871745B2Publication Date: 2011-01-18
- Inventor: Ju-Te Chen , Wen-Tsung Wu
- Applicant: Ju-Te Chen , Wen-Tsung Wu
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03C5/00

Abstract:
The invention provides an exposure method for manufacturing a device. The method includes providing a wafer having several exposure regions with a photoresist layer covering thereon. A feedback parameter map with several exposure-region feedback parameter sets respectively corresponds to the exposure regions of the wafer. At least one of the exposure-region feedback parameter sets is different from the rest of the exposure-region feedback parameter sets. According to the feedback parameter map, an exposure process is sequentially performed on each of the exposure regions of the wafer through an exposure tool to pattern the photoresist layer on the wafer. While the exposure tool performs the exposure process on each of the exposure regions, an exposure process parameter set of the exposure tool is adjusted based on the exposure-region feedback parameter sets corresponding to the exposure region in the feedback parameter map.
Public/Granted literature
- US20090170039A1 EXPOSURE METHOD Public/Granted day:2009-07-02
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