Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
- Patent Title (中): 半导体装置及其制造方法,电路板和电子仪器
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Application No.: US12314146Application Date: 2008-12-04
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Publication No.: US07871858B2Publication Date: 2011-01-18
- Inventor: Nobuaki Hashimoto
- Applicant: Nobuaki Hashimoto
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP10-100580 19980327; JP11-041119 19990219
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of manufacturing a semiconductor device forms a penetrating hole in a substrate so that the penetrating hole extends from a first surface of the substrate to a second surface of the substrate being opposite to the first surface. An internal wall surface of the penetrating hole has a protrusion formed of a material constituting the substrate, the first surface of the substrate being closer to the protrusion than the second surface. A conductive member is formed on the first surface so that the conductive member covers the penetrating hole. A semiconductor chip is mounted on the first surface so that an electrode of the semiconductor chip is electrically connected to the conductive member. An external electrode is provided through the penetrating hole so that the external electrode is electrically connected to the conductive member and the external electrode projects from the second surface of the substrate.
Public/Granted literature
- US20090117687A1 Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument Public/Granted day:2009-05-07
Information query
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