Invention Grant
- Patent Title: NPN Darlington ESD protection circuit
- Patent Title (中): NPN达林顿ESD保护电路
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Application No.: US11463002Application Date: 2006-08-07
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Publication No.: US07880234B2Publication Date: 2011-02-01
- Inventor: Tao Cheng , Ding-Jeng Yu
- Applicant: Tao Cheng , Ding-Jeng Yu
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu Hsien
- Assignee: MediaTek Inc.
- Current Assignee: MediaTek Inc.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu Hsien
- Agent Winston Hsu; Scott Margo
- Priority: TW91122074A 20020925
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
An electrostatic discharge protection circuit includes a metal-oxide semiconductor transistor having a first terminal connected to an input end, and a gate connected to a supply voltage; a first bipolar junction transistor having a first terminal connected to the input end, and a base connected to a second terminal of the metal-oxide semiconductor transistor; a second bipolar junction transistor having a first terminal connected to the input end, a second terminal connected to the supply voltage, and a base connected to the second terminal of the first bipolar junction transistor; a first resistive device having a first end connected to the second terminal of the metal-oxide semiconductor transistor, and a second end connected to the supply voltage; and a second resistive device having a first end connected to the second terminal of the first bipolar junction transistor, and a second end connected to the supply voltage.
Public/Granted literature
- US20060267102A1 NPN DARLINGTON ESD PROTECTION CIRCUIT Public/Granted day:2006-11-30
Information query
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