A semiconductor circuit is provided that includes a short channel device, and a long channel device that is electrically isolated from the short channel device. The long channel device comprises a plurality of first gate electrodes, a first source region adjacent one of the plurality of first gate electrodes, a first drain region adjacent another of the plurality of first gate electrodes, and a plurality of common source/drain regions positioned between adjacent ones of the plurality of first gate electrodes. The first gate electrodes each overlie portions of a layer of high-dielectric constant (k) gate insulator material. Each of the first gate electrodes are electrically coupled to at least one of the other first gate electrodes.