Invention Grant
- Patent Title: Radiation-triggered semiconductor shutdown device
- Patent Title (中): 辐射触发半导体关断装置
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Application No.: US11741452Application Date: 2007-04-27
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Publication No.: US07880340B2Publication Date: 2011-02-01
- Inventor: Roy Mark Miller
- Applicant: Roy Mark Miller
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Zagorin O'Brien Graham LLP
- Main IPC: H01H83/00
- IPC: H01H83/00
Abstract:
An integrated circuit includes a radiation-triggered shutdown circuit that disables a critical aspect of the integrated circuit rendering the integrated circuit non-functional when the integrated circuit receives a predetermined radiation dose. That ensures integrated circuits including the radiation-triggered shutdown circuit are ITAR compliant.
Public/Granted literature
- US20080266734A1 RADIATION-TRIGGERED SEMICONDUCTOR SHUTDOWN DEVICE Public/Granted day:2008-10-30
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