Invention Grant
- Patent Title: Method of depositing fluids within a microelectric topography processing chamber
- Patent Title (中): 在微电子地形处理室内沉积流体的方法
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Application No.: US12616367Application Date: 2009-11-11
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Publication No.: US07884033B2Publication Date: 2011-02-08
- Inventor: Igor C. Ivanov
- Applicant: Igor C. Ivanov
- Applicant Address: US CA Fremont
- Assignee: Lam Research
- Current Assignee: Lam Research
- Current Assignee Address: US CA Fremont
- Agency: Daffer McDaniel, LLP
- Agent Kevin L. Daffer; Mollie E. Lettang
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H05K7/00 ; B05B7/06 ; B05D3/12 ; B65H1/00

Abstract:
An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.
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Information query
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