Invention Grant
US07888272B2 Methods for manufacturing memory and logic devices using the same process without the need for additional masks
有权
使用相同过程制造存储器和逻辑器件而不需要额外掩模的方法
- Patent Title: Methods for manufacturing memory and logic devices using the same process without the need for additional masks
- Patent Title (中): 使用相同过程制造存储器和逻辑器件而不需要额外掩模的方法
-
Application No.: US11609747Application Date: 2006-12-12
-
Publication No.: US07888272B2Publication Date: 2011-02-15
- Inventor: Kuan Fu Chen , Yin Jen Chen , Tzung Ting Han , Ming-Shang Chen , Shih Chin Lee
- Applicant: Kuan Fu Chen , Yin Jen Chen , Tzung Ting Han , Ming-Shang Chen , Shih Chin Lee
- Applicant Address: TW
- Assignee: Macronix International Co. Ltd.
- Current Assignee: Macronix International Co. Ltd.
- Current Assignee Address: TW
- Agency: Baker & McKenzie LLP
- Main IPC: H01L21/318
- IPC: H01L21/318
Abstract:
A semiconductor fabrication process allows the fabrication of both logic and memory devices using a conventional CMOS process with a few additional steps. The additional steps, however, do not require additional masks. Accordingly, the process can be reduce the complexity, time, and cost for fabricating logic and memory devices on the same substrate, especially for embedded applications.
Public/Granted literature
Information query
IPC分类:
