Invention Grant
- Patent Title: MEMS device and method of making the same
- Patent Title (中): MEMS器件及其制作方法
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Application No.: US12168057Application Date: 2008-07-03
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Publication No.: US07898081B2Publication Date: 2011-03-01
- Inventor: Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Ming-I Wang
- Applicant: Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Ming-I Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H02K41/00
Abstract:
A MEMS device includes a vent hole structure and a MEMS structure disposed on a same side of a substrate. The vent hole structure adjoins the MEMS structure with an etch stop structure therebetween. The MEMS structure includes a chamber, the vent hole structure includes a metal layer having at least a hole thereon as a vent hole to connect the chamber of the MEMS structure through the etch stop structure. Accordingly, the MEMS device has a lateral vent hole. Furthermore, as the vent hole structure and the MEMS structure are disposed on the same side of the substrate, the manufacturing process is convenient and timesaving.
Public/Granted literature
- US20100002894A1 MEMS device and method of making the same Public/Granted day:2010-01-07
Information query
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