Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12715401Application Date: 2010-03-02
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Publication No.: US07902673B2Publication Date: 2011-03-08
- Inventor: Ying-Wei Wang
- Applicant: Ying-Wei Wang
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A tooling method for fabricating semiconductor devices includes identifying two adjacent device lines having a device-to-device spacing width in an active region of a substrate, performing an operation to selectively define a first region as a region between the two adjacent device lines overlapping the active region, forming a first block pattern corresponding to the first region on a photomask when the device-to-device spacing width is equal to a predetermined value, and transferring the first block pattern to the substrate.
Public/Granted literature
- US20100155948A1 TOOLING METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES FABRICATED THEREOF Public/Granted day:2010-06-24
Information query
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