Invention Grant
- Patent Title: Film quality evaluation method, apparatus therefor, and production system for thin-film device
- Patent Title (中): 薄膜质量评价方法及其设备及薄膜器件生产系统
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Application No.: US12517200Application Date: 2007-10-31
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Publication No.: US07907276B2Publication Date: 2011-03-15
- Inventor: Satoshi Sakai , Yoichiro Tsumura , Masami Iida , Kohei Kawazoe
- Applicant: Satoshi Sakai , Yoichiro Tsumura , Masami Iida , Kohei Kawazoe
- Applicant Address: JP
- Assignee: Mitsubishi Heavy Industries, Ltd.
- Current Assignee: Mitsubishi Heavy Industries, Ltd.
- Current Assignee Address: JP
- Agency: Kanesaka Berner & Partners, LLP
- Priority: JP2007-039596 20070220
- International Application: PCT/JP2007/071178 WO 20071031
- International Announcement: WO2008/102484 WO 20080828
- Main IPC: G01J3/44
- IPC: G01J3/44
Abstract:
An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not.
Public/Granted literature
- US20100067010A1 FILM QUALITY EVALUATION METHOD, APPARATUS THEREFOR, AND PRODUCTION SYSTEM FOR THIN-FILM DEVICE Public/Granted day:2010-03-18
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