Invention Grant
- Patent Title: High thermal conductivity substrate for a semiconductor device
- Patent Title (中): 用于半导体器件的高导热性衬底
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Application No.: US11760369Application Date: 2007-06-08
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Publication No.: US07911059B2Publication Date: 2011-03-22
- Inventor: Ching-Tai Cheng , Jui-Kang Yen
- Applicant: Ching-Tai Cheng , Jui-Kang Yen
- Applicant Address: TW Chu-Nan
- Assignee: SeniLEDS Optoelectronics Co., Ltd
- Current Assignee: SeniLEDS Optoelectronics Co., Ltd
- Current Assignee Address: TW Chu-Nan
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/00

Abstract:
A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.
Public/Granted literature
- US20080303157A1 HIGH THERMAL CONDUCTIVITY SUBSTRATE FOR A SEMICONDUCTOR DEVICE Public/Granted day:2008-12-11
Information query
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