Invention Grant
- Patent Title: Field emission cathode capable of amplifying electron beam and methods of controlling electron beam density
- Patent Title (中): 能够放大电子束的场发射阴极和控制电子束密度的方法
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Application No.: US12234491Application Date: 2008-09-19
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Publication No.: US07915800B2Publication Date: 2011-03-29
- Inventor: Yong Hyup Kim , Wal Jun Kim
- Applicant: Yong Hyup Kim , Wal Jun Kim
- Applicant Address: KR Seoul
- Assignee: SNU R&DB Foundation
- Current Assignee: SNU R&DB Foundation
- Current Assignee Address: KR Seoul
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: KR10-2008-0080665 20080819
- Main IPC: H01J63/04
- IPC: H01J63/04 ; H01J1/62 ; H01K9/02
Abstract:
Field emission devices (FEDs) are provided. In one embodiment, an FED includes an electron emitter, a tube spaced apart from the electron emitter and having a first opening and a second opening, and a gate electrode disposed on an outer surface of the tube. The first opening is disposed at one end of the tube adjacent to the electron emitter, and the second opening is disposed at the other end of the tube. The FED further includes an anode that is spaced apart from the second opening and collects secondary electrons emitted from the second opening.
Public/Granted literature
- US20100045158A1 ELECTRON DENSITY CONTROLLABLE FIELD EMISSION DEVICES Public/Granted day:2010-02-25
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