Invention Grant
US07936075B2 Semiconductor device and semiconductor device manufacturing method 有权
半导体器件和半导体器件制造方法

Semiconductor device and semiconductor device manufacturing method
Abstract:
The present invention provides a semiconductor device for which thermal stress at mounting is reduced and a reduction in reliability with regard to moisture absorption is prevented. The semiconductor device includes a uppermost metal layer 12, a solder bump 17, metals 15 and 16 which connect an uppermost metal layer 12 and the solder bump 17, and, a polyimide multilayer 14 having formed therein an opening 14x in which the metals 15 and 16 are provided. The polyimide multilayer 14 includes a first polyimide layer 14A and a second polyimide layer 14B formed on the first polyimide layer 14A. The second polyimide layer 14B is softer than the first polyimide layer 14A. A thermal stress at mounting is reduced by the second polyimide layer 14B. Since the first polyimide layer 14A has a higher strength than the second polyimide layer 14B, even if cracking occurs in the second polyimide layer 14B, the cracks are prevented from developing in the first polyimide layer 14A.
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