Invention Grant
- Patent Title: Pixel structure and method for fabricating the same
- Patent Title (中): 像素结构及其制造方法
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Application No.: US11962119Application Date: 2007-12-21
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Publication No.: US07939828B2Publication Date: 2011-05-10
- Inventor: Yu-Cheng Chen
- Applicant: Yu-Cheng Chen
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW96112822A 20070412
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
A method for fabricating a pixel structure includes providing a substrate having a pixel area. A first metal layer, a gate insulator and a semiconductor layer are formed on the substrate and patterned by using a first half-tone mask or a gray-tone mask to form a transistor pattern, a lower capacitance pattern and a lower circuit pattern. Next, a dielectric layer and an electrode layer both covering the three patterns are sequentially formed and patterned to expose a part of the lower circuit pattern, a part of the lower capacitance pattern and a source/drain region of the transistor pattern. A second metal layer formed on the electrode layer and the electrode layer are patterned by using a second half-tone mask or the gray-tone mask to form an upper circuit pattern, a source/drain pattern and an upper capacitance pattern. A portion of the electrode layer constructs a pixel electrode.
Public/Granted literature
- US20080251789A1 PIXEL STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2008-10-16
Information query
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