Invention Grant
- Patent Title: Double plasma ion source
- Patent Title (中): 双等离子体离子源
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Application No.: US12183961Application Date: 2008-07-31
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Publication No.: US07947966B2Publication Date: 2011-05-24
- Inventor: William F. DiVergilio
- Applicant: William F. DiVergilio
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01J27/02
- IPC: H01J27/02

Abstract:
An ion source includes a first plasma chamber including a plasma generating component and a first gas inlet for receiving a first gas such that said plasma generating component and said first gas interact to generate a first plasma within said first plasma chamber, wherein said first plasma chamber further defines an aperture for extracting electrons from said first plasma, and a second plasma chamber including a second gas inlet for receiving a second gas, wherein said second plasma chamber further defines an aperture in substantial alignment with the aperture of said first plasma chamber, for receiving electrons extracted therefrom, such that the electrons and the second gas interact to generate a second plasma within said second plasma chamber, said second plasma chamber further defining an extraction aperture for extracting ions from said second plasma.
Public/Granted literature
- US20090114841A1 DOUBLE PLASMA ION SOURCE Public/Granted day:2009-05-07
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