Invention Grant
- Patent Title: Memory card with electrostatic discharge protection and manufacturing method thereof
- Patent Title (中): 具有静电放电保护的存储卡及其制造方法
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Application No.: US12371794Application Date: 2009-02-16
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Publication No.: US07948772B2Publication Date: 2011-05-24
- Inventor: Yueh-Ming Tung , Kuo-Yang Sun , Chia-Ming Yang , Chung-Lun Lee , Jin-Chun Wen , Yuan-Wei Liu , Wei-Mao Hung
- Applicant: Yueh-Ming Tung , Kuo-Yang Sun , Chia-Ming Yang , Chung-Lun Lee , Jin-Chun Wen , Yuan-Wei Liu , Wei-Mao Hung
- Applicant Address: TW Kaohsiung
- Assignee: Orient Semiconductor Electronics
- Current Assignee: Orient Semiconductor Electronics
- Current Assignee Address: TW Kaohsiung
- Agency: J.C. Patents
- Priority: TW95124284A 20060704
- Main IPC: H05K9/00
- IPC: H05K9/00
Abstract:
A memory card with electrostatic discharge (ESD) protection and a manufacturing method thereof are provided. The memory card includes a circuit board, a set of contacts, at least one chip and an ESD protection path. The signal paths of the board is not exposed at the edge of the circuit board. The ESD protection path for transmitting ESD current is disposed on the circuit board. Furthermore, a part of the ESD protection path extends to the edge of the circuit board.
Public/Granted literature
- US20090154040A1 MEMORY CARD WITH ELECTROSTATIC DISCHARGE PROTECTION AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-06-18
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