Abstract:
A memory card with electrostatic discharge (ESD) protection and a manufacturing method thereof are provided. The memory card includes a circuit board, a set of contacts, at least one chip and an ESD protection path. The signal paths of the board is not exposed at the edge of the circuit board. The ESD protection path for transmitting ESD current is disposed on the circuit board. Furthermore, a part of the ESD protection path extends to the edge of the circuit board.
Abstract:
A package structure includes a lead frame having a plurality of leads, each of which includes a first recession, at least a first device, and a plurality of solder joints respectively positioned in the first recessions for connecting the first device to the lead frame.
Abstract:
A semiconductor package includes a substrate, a first chip, a nonconductive adhesive, a second chip and a plurality of supporting balls. The first chip has an upper surface and a lower surface opposite to the upper surface, and the lower surface is mounted on the substrate. The nonconductive adhesive is disposed on the upper surface of the first chip. The second chip has an upper surface and a lower surface opposite to the upper surface, wherein the lower surface is mounted on the upper surface of the first chip by means of the nonconductive adhesive, and the adherent area between the nonconductive adhesive and the second chip is larger than 90% of the area of the lower surface of the second chip. The supporting balls are disposed in the nonconductive adhesive for supporting the second chip.
Abstract:
A lens module structure includes an image sensing chip disposed on the first side of a substrate and electrically coupled to the substrate through wires. A memory chip and a control chip are soldered onto a second surface of the substrate, and a solderable output unit terminal is provided on one side of the second surface of the substrate for connecting to other electronic components. A lens pedestal is fastened onto the first surface of the substrate such that the image sensing chip is encapsulated within the lens pedestal, and an optical lens is provided within the lens pedestal and corresponding to the image sensing chip. In such way, the assembled components of the lens are decreased and the chips thereof are designed in a modular mode such that the overall volume of the lens is reduced and the surface mounting technologies can be omitted.
Abstract:
A memory card with electrostatic discharge (ESD) protection and a manufacturing method thereof are provided. The memory card includes a circuit board, a set of contacts, at least one chip and an ESD protection path. The signal paths of the board is not exposed at the edge of the circuit board. The ESD protection path for transmitting ESD current is disposed on the circuit board. Furthermore, a part of the ESD protection path extends to the edge of the circuit board.
Abstract:
A film includes a removable base material, a resin layer and a plurality of arc elastomers. The resin layer is a partially-cured resin which is in a half-melting state with viscosity at a temperature higher than a first temperature and in a solid state without viscosity at a temperature lower than a second temperature, and the resin layer in a solid state is adhered on the base material. The arc elastomers are disposed inside the resin layer. The present invention further provides a chip packaging process using the film.
Abstract:
A memory card with electrostatic discharge (ESD) protection is provided. The memory card includes a board, a set of contacts, at least one chip and an ESD protection path. The board having a signal path not electrically connected to the edge of the board. The ESD protection path for transmitting ESD current is disposed on the board. Furthermore, a part of the ESD protection path extends to the edge of the board.
Abstract:
A semiconductor package structure is disclosed. The structure includes a lead frame, a semiconductor chip, a plurality of metallic conducting wires, an encapsulation, a barrier layer and a pure tin layer, herein the lead frame has at least one die pad, a plurality of inner leads and outer leads. The semiconductor chip is disposed on the die pad. The metallic conducting wires electrically connect the semiconductor chip and the inner leads. The encapsulation packages of the semiconductor chip, the die pad, the metallic conducting wires and the inner leads. The barrier layer covers each of the outer leads to prevent an inter-metallic compound produced by the outer leads and pure tin. The pure tin layer covers the barrier layer to increase the solder wettability for the outer leads. Besides, a method for manufacturing the semiconductor package structure is disclosed.
Abstract:
A package structure includes a lead frame having a plurality of leads, each of which includes a first recession, at least a first device, and a plurality of solder joints respectively positioned in the first recessions for connecting the first device to the lead frame.