Various stacked semiconductor devices and methods of making the same are provided. In one aspect, a method of manufacturing is provided that includes providing a first semiconductor die that has a first bulk semiconductor side and a first opposite side. A second semiconductor die is provided that has a second bulk semiconductor side and a second opposite side. The second opposite side of the second semiconductor die is coupled to the first opposite side of the first semiconductor die. Electrical connections are formed between the first semiconductor die and the second semiconductor die.