Invention Grant
US07972971B2 Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
有权
通过锗的缩合在同一衬底上生产Ge中具有不同含量的Si1-yGey基区的方法
- Patent Title: Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
- Patent Title (中): 通过锗的缩合在同一衬底上生产Ge中具有不同含量的Si1-yGey基区的方法
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Application No.: US11761122Application Date: 2007-06-11
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Publication No.: US07972971B2Publication Date: 2011-07-05
- Inventor: Jean-Francois Damlencourt , Yves Morand , Laurent Clavelier
- Applicant: Jean-Francois Damlencourt , Yves Morand , Laurent Clavelier
- Applicant Address: FR Paris FR Montrouge
- Assignee: Commissariat A l'Energie Atomique,STMicroelectronics SA
- Current Assignee: Commissariat A l'Energie Atomique,STMicroelectronics SA
- Current Assignee Address: FR Paris FR Montrouge
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0652094 20060612
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
The disclosure relates to a method for producing a microelectronic device including a plurality of Si1-yGey based semi-conducting zones (where 0
Public/Granted literature
Information query
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