Fluorine-passivated reticles for use in lithography and methods for fabricating and using such reticles are provided. According to one embodiment, a method for performing photolithography comprises placing a fluorine-passivated reticle between an illumination source and a target semiconductor wafer and causing electromagnetic radiation to pass from the illumination source through the fluorine-passivated reticle to the target semiconductor wafer. In another embodiment, a fluorine-passivated reticle comprises a substrate and a patterned fluorine-passivated absorber material layer overlying the substrate. According to another embodiment, a method for fabricating a reticle for use in photolithography comprises providing a substrate and forming a fluorine-passivated absorber material layer overlying the substrate.