Invention Grant
US07989151B2 Resolution enhancement in optical lithography via absorbance-modulation enabled multiple exposures
有权
通过吸光度调制进行光学光刻的分辨率增强可实现多次曝光
- Patent Title: Resolution enhancement in optical lithography via absorbance-modulation enabled multiple exposures
- Patent Title (中): 通过吸光度调制进行光学光刻的分辨率增强可实现多次曝光
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Application No.: US11565051Application Date: 2006-11-30
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Publication No.: US07989151B2Publication Date: 2011-08-02
- Inventor: Rajesh Menon
- Applicant: Rajesh Menon
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gauthier & Conners LLP
- Main IPC: G03B27/54
- IPC: G03B27/54

Abstract:
A method to enhance resolution in optical lithography via absorbance-modulation involves exposing an opaque absorbance modulation layer (AML) to a first waveform having wavelength, 81, with the first exposure forming a first set of transparent regions in the opaque AML and forming a first pattern made of a set of exposed regions in a photoresist layer. Next, the AML is restored to its original opaque state. Next, the restored AML is re-exposed to the first waveform having wavelength, 81, with the exposure forming a second set of transparent regions in the opaque AML and forming a second pattern having a set of exposed regions in a photoresist layer. The first and second patterns in the photoresist layer form a final pattern with enhanced resolution and decreased spatial period than the first pattern. In another scenario, instead of exposing the AML to a first waveform, two waveforms are used (the second being complimentary to the first) to ensure that the transmitted image has sharper edges compared to the original image.
Public/Granted literature
- US20070154850A1 RESOLUTION ENHANCEMENT IN OPTICAL LITHOGRAPHY VIA ABSORBANCE-MODULATION ENABLED MULTIPLE EXPOSURES Public/Granted day:2007-07-05
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