Invention Grant
US07993973B2 Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
有权
结合IC集成基板和载体的结构，以及制造这种结构的方法
- Patent Title: Structure combining an IC integrated substrate and a carrier, and method of manufacturing such structure
- Patent Title (中): 结合IC集成基板和载体的结构，以及制造这种结构的方法
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Application No.: US12267374Application Date: 2008-11-07
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Publication No.: US07993973B2Publication Date: 2011-08-09
- Inventor: Chih-kuang Yang
- Applicant: Chih-kuang Yang
- Applicant Address: TW Hsinchu
- Assignee: Princo Corp.
- Current Assignee: Princo Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention provides a structure combining an IC integrated substrate and a carrier, which comprises a carrier and an IC integrated substrate formed on the carrier. The interface between the IC integrated substrate and the carrier has a specific area at which the interface adhesion is different from that at the remaining area of the interface. The present invention also provides a method of manufacturing the above structure and a method of manufacturing electronic devices using the above structure.
Public/Granted literature
- US20090061565A1 STRUCTURE COMBINING AN IC INTEGRATED SUBSTRATE AND A CARRIER, AND METHOD OF MANUFACTURING SUCH STRUCTURE Public/Granted day:2009-03-05
Information query
IPC分类:
