Invention Grant
- Patent Title: Sidewall graphene devices for 3-D electronics
- Patent Title (中): 用于3-D电子器件的侧壁石墨烯器件
-
Application No.: US12202011Application Date: 2008-08-29
-
Publication No.: US07993986B2Publication Date: 2011-08-09
- Inventor: An Chen , Zoran Krivokapic
- Applicant: An Chen , Zoran Krivokapic
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Ditthavong Mori & Steiner, P.C.
- Main IPC: H01L21/335
- IPC: H01L21/335
Abstract:
A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.
Public/Granted literature
- US20100055388A1 SIDEWALL GRAPHENE DEVICES FOR 3-D ELECTRONICS Public/Granted day:2010-03-04
Information query
IPC分类:
