Invention Grant
- Patent Title: Light emitting device and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
-
Application No.: US11462307Application Date: 2006-08-03
-
Publication No.: US07994711B2Publication Date: 2011-08-09
- Inventor: Yasuo Nakamura , Noriko Shibata
- Applicant: Yasuo Nakamura , Noriko Shibata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-229439 20050808
- Main IPC: H01L29/201
- IPC: H01L29/201

Abstract:
An active matrix light emitting device of which luminance characteristic does not vary among light emitting elements of respective pixels, and which can be realized even in a high definition display panel is disclosed. In the light emitting device, a light emitting material is interposed between a first electrode and a second electrode electrically connected to an auxiliary wiring, not only in a peripheral portion but also in a pixel portion. A layer containing the light emitting material comprises a first buffer layer, a light emitting layer, and a second buffer layer. In the pixel portion, either one or both of the first and the second buffer layer are interposed between the auxiliary wiring and the second electrode where the second electrode and the auxiliary wiring are electrically connected.
Public/Granted literature
- US20070029929A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2007-02-08
Information query
IPC分类: