Invention Grant
- Patent Title: Piezoelectric actuation structure including an integrated piezoresistive strain gauge and its production method
- Patent Title (中): 包括压电应变计的压电致动结构及其制造方法
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Application No.: US12898292Application Date: 2010-10-05
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Publication No.: US08004154B2Publication Date: 2011-08-23
- Inventor: Matthieu Cueff , Emmanuel Defay , François Perruchot , Patrice Rey
- Applicant: Matthieu Cueff , Emmanuel Defay , François Perruchot , Patrice Rey
- Applicant Address: FR
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR
- Agency: Baker & Hostetler
- Priority: FR0904774 20091006
- Main IPC: H01L41/08
- IPC: H01L41/08
Abstract:
The invention relates to a piezoelectric actuation structure including at least one strain gauge and at least one actuator produced from a stack on the surface of a substrate of at least one layer of piezoelectric material arranged between a bottom electrode layer and a top electrode layer, at least a portion of the stack forming the actuator being arranged above a cavity produced in the substrate, characterized in that the strain gauge is a piezoresistive gauge located in the top electrode layer and/or the bottom electrode layer, the layer or layers including electrode discontinuities making it possible to produce said piezoresistive gauge. The invention also relates to a method for producing such a structure.
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