Invention Grant
- Patent Title: Luminescence diode chip with current spreading layer and method for producing the same
- Patent Title (中): 具有电流扩散层的LED芯片及其制造方法
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Application No.: US12158474Application Date: 2006-11-21
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Publication No.: US08017953B2Publication Date: 2011-09-13
- Inventor: Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
- Applicant: Berthold Hahn , Ralph Wirth , Tony Albrecht , Magnus Ahlstedt , Stefan Illek , Klaus Streubel
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Fish & Richardson P.C.
- Priority: DE102005061797 20051223
- International Application: PCT/DE2006/002046 WO 20061121
- International Announcement: WO2007/076743 WO 20070712
- Main IPC: H01L27/15
- IPC: H01L27/15

Abstract:
An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.
Public/Granted literature
- US20090127580A1 LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME Public/Granted day:2009-05-21
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