Invention Grant
- Patent Title: Semiconductor laser apparatus
- Patent Title (中): 半导体激光装置
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Application No.: US12685580Application Date: 2010-01-11
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Publication No.: US08017957B2Publication Date: 2011-09-13
- Inventor: Daijiro Inoue , Masayuki Hata , Yasuyuki Bessho
- Applicant: Daijiro Inoue , Masayuki Hata , Yasuyuki Bessho
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-253049 20040831; JP2005-231212 20050809
- Main IPC: H01L29/201
- IPC: H01L29/201

Abstract:
A sub-substrate, a blue-violet semiconductor laser device, an insulating layer, and a red semiconductor laser device are stacked in order on a support member through a plurality of fusion layers. The insulating layer is stacked on an n-side pad electrode of the blue-violet semiconductor laser device, and a conductive layer is formed on the insulating layer. The red semiconductor laser device is stacked on the conductive layer through a fusion layer. The conductive layer is electrically connected to a p-side pad electrode of the red semiconductor laser device. The n-side pad electrode of the blue-violet semiconductor laser device and the n-side pad electrode of the red semiconductor laser device are electrically connected to each other.
Public/Granted literature
- US20100111131A1 SEMICONDUCTOR LASER APPARATUS Public/Granted day:2010-05-06
Information query
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